isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage
: VCE(s...
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation
Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A ·Complement to Type 2SD1235 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for large current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-60
V
VCEO Collector-Emitter
Voltage
-30
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-15
A
30 W
1.75
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB919
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2SB919
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-30
V
-60
V
-6
V
-0.5
V
-0.1 mA
-0.1...