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2SB897

Inchange Semiconductor

Silicon PNP Power Transistor


Description
isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max.) @IC= 10A ·Complement to Type 2SD1210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and...



Inchange Semiconductor

2SB897

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