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2SB885

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor 2SB885 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -2.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SD1195 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ...

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