isc
Silicon PNP Darlington
Power Transistor
2SB885
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= -2.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SD119...