:
SILICON PNP TRIPLE DIFFUSED TYPE
1
o POWER AMPLIFIER APPLICATIONS.
FEATURES . Complementary to 2SD1148 . Recommend f...
:
SILICON PNP TRIPLE DIFFUSED TYPE
1
o POWER AMPLIFIER APPLICATIONS.
FEATURES . Complementary to 2SD1148 . Recommend for 70W High Fidelity
Audio Frequency Amplifier Output Stage.
Unit in mm 15.9MAX. 0&2±O.2
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VeBO IC IB
PC
Ti T stg
RATING -140 -140 -5 -10 -1
100
150
-55-150
UNIT
545±0.2 X
cicJ
+
ff^^t
1. BASE 2. collector Cheat sink) 3l EMITTER
JEDEC
TOSHIBA
2-16B1A
Weight : 4.6g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown
Voltage
SYMBOL ICBO lEBO
TEST CONDITION V CB=-140V, I E=0 VEB=-5V, I C=0
v (BR) CEO IC=-50mA, Ib=0
DC Current Gain
Collector-Emitter Saturation
Voltage
hFE(l) (Note)
hFE(2)
VCE=-5V, I C=-1A VCE=-5V, I C=-5A
VcE(sat) IC=-...
