2SB860

2SB860 Silicon PNP Triple Diffused ADE-208-861 (Z) 1st. Edition September 2000 Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SD1137 Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Rating Unit –100 V –100 V –4 V –4 A –5 A 1.8 W 40 W 150 °C –45 to +150 °C 2SB860 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to emitter breakdown V(BR)CEO –100 — voltage Emitter to base breakdown V(BR)EBO –4 — voltage Collector cutoff current I CEO — — Emitter cutoff current I EBO — — Collector to emitter saturation VCE(sat) — — voltage DC current transfer ratio hFE 50 — 25 — Note: 1. Pulse test Max Unit — V — V –100 µA –50 µA –1.0 V 250 350 Test conditions IC = –10 mA, RBE = ∞ IE = –1 mA, IC = 0 VCE = –80 V, RBE = ∞ VEB = –3.5 V, IC = 0 IC = –1 A, IB = –0.1 A*1 VCE = –4 V IC = –0.5 A*1 IC = –50 mA Collector power dissipaition PC (W) Collector current IC (A) Maximum Collector Dissepation Curve 60 40 20 0 50 100 150 Case temperature TC (°C) Area of Safe Operation –10 ICmax –3 (–10 V, –4 A) (–40 V, –1 A) –1.0 –0.3 –0.1 –0.03 TC...