2SB858

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB857 2SB858 · DESCRIPTION ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SB857 VCEO Collector-emitter voltage 2SB858 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -60 -5 -4 -8 40 150 -45~150 V A A W CONDITIONS Open emitter VALUE -70 -50 V UNIT V SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB857 IC=-50mA; RBE=; 2SB858 IC=-10µA; IE=0 IE=-10µA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-50V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS SYMBOL 2SB857 2SB858 MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 V V V V µA V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency hFE-1 classifications B 60-120 C 100-200 D 160-320 2 SavantIC Sem...