Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD969
6.9±...
Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD969
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
Low collector to emitter saturation
voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.5
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IC = –10µA, IC = 0 VCE = –2V, IC = –0.5A*2 VCE = –2V, IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 150 15
*2
min
typ
max –100 –1
–25 –20 –7 90...
