Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD875
Unit...
Transistor
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD875
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
Large collector power dissipation PC. High collector to emitter
voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings –80 –80 –5 –1 – 0.5
*
2.6±0.1
0.4max.
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
2
1
marking
EIAJ:SC–62 Mini Power Type Package
1 150 –55 ~ +150 1cm2
Marking symbol : C
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*1
Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10...