DatasheetsPDF.com

2SB765 Datasheet

Part Number 2SB765
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB765 Datasheet2SB765 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB765 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864 APPLICATIONS ·For medium speed and power switching Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage C.

  2SB765   2SB765






Part Number 2SB765
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB765 Datasheet2SB765 Datasheet (PDF)

www.DataSheet4U.com .

  2SB765   2SB765







Part Number 2SB765
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB765 Datasheet2SB765 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.

  2SB765   2SB765







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB765 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864 APPLICATIONS ·For medium speed and power switching Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -3 -6 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA, RBE=> IE=-50mA ,IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA VCB=-120V, IE=0 VCE=-100V; RBE=> IC=-1.5A ; VCE=-3V 1000 MIN -120 -7 TYP. 2SB765 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 20000 V V V V µA µA Switching ti.


2009-02-16 : C1947    MSAFA1N100D    MSAFA1N100P3    MSAFA75N10C    MSAFR12N50A    MSAER12N50A    MSAFR30N20A    MSAER30N20A    MSAFX10N90A    MSAFX11P50A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)