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2SB764 Datasheet

Part Number 2SB764
Manufacturers WEJ
Logo WEJ
Description PNP Transistor
Datasheet 2SB764 Datasheet2SB764 Datasheet (PDF)

RoHS 2SB764 2SB764 TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO .

  2SB764   2SB764






Part Number 2SB764
Manufacturers JIANGSU CHANGJIANG
Logo JIANGSU CHANGJIANG
Description PNP Transistor
Datasheet 2SB764 Datasheet2SB764 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB764 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR 3. BASE FEATURES z General Purpose Switching Application MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Tem.

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Part Number 2SB764
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SB764 Datasheet2SB764 Datasheet (PDF)

Ordering number:575D PNP/NPN Epitaxial Planar Silicon Transistors 2SB764/2SD863 Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications Package Dimensions unit:mm 2006A [2SB764/2SD863] ( ) : 2SB764 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VC.

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Part Number 2SB764
Manufacturers LZG
Logo LZG
Description SILICON PNP TRANSISTOR
Datasheet 2SB764 Datasheet2SB764 Datasheet (PDF)

2SB764(3CG764) PNP /SILICON PNP TRANSISTOR :,。 Purpose: Voltage regulator, relay·lamp driver, electrical equipment applications. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg -60 -50 -5.0 -1.0 -2.0 900 150 -55~150 V V V A A mW ℃ ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob IC=-10μA IC=-1.0mA IC=-10μA VCB=-50V VEB=-4.0V VCE=-2.0V V.

  2SB764   2SB764







Part Number 2SB764
Manufacturers TRANSYS Electronics
Logo TRANSYS Electronics
Description Plastic-Encapsulated Transistors
Datasheet 2SB764 Datasheet2SB764 Datasheet (PDF)

www.DataSheet.co.kr Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB764 TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltag.

  2SB764   2SB764







PNP Transistor

RoHS 2SB764 2SB764 TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO unless otherwise specified) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency W Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200 F 160-320 J E E C E L VBE IEBO R T sat O Test conditions Ic=-10µA, IE=0 Ic=-1mA, IB=0 N IC C MIN O TYP 123 D T L , . MAX UNIT V V V -60 -50 -5 -1 -1 60 30 -0.7 -1.2 150 20 320 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 µA µA hFE(1) VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz hFE(2) VCE(sat) V V MHz pF fT Cob WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] Free Datasheet http://www.Datasheet4U.com .


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