2SB745

Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) 1.0 s 2.5±0.1 1.0 Features 1.5 1.5 R0.9 R0.9 1.0±0.1 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.85 0.55±0.1 1.25±0.05 0.45±0.05 Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150 Unit V 3 2 1 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB745 2SB745A 2SB745 2SB745A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –5V, IE = 2mA IC = –100mA, IB = –10mA VCE = –1V, IC = –100mA VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min typ max –100 –1 4.1±0.2 4.5±0.1 7 Unit nA µA V –35 –55 –35 –55 –5 180 ...