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2SB688 Datasheet

Part Number 2SB688
Manufacturers First Silicon
Logo First Silicon
Description PNP EPITAXIAL SILICON TRANSISTOR
Datasheet 2SB688 Datasheet2SB688 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3P ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG 1: BASE 2: COLL.

  2SB688   2SB688






Part Number 2SB688
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet 2SB688 Datasheet2SB688 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB688 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Colle.

  2SB688   2SB688







Part Number 2SB688
Manufacturers Savantic
Logo Savantic
Description Silicon PNP Power Transistors
Datasheet 2SB688 Datasheet2SB688 Datasheet (PDF)

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB688 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VE.

  2SB688   2SB688







Part Number 2SB688
Manufacturers JCET
Logo JCET
Description PNP Transistor
Datasheet 2SB688 Datasheet2SB688 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SB688 TRANSISTOR (PNP) FEATURES z High Breakdown Voltage z Complement to Type 2SD718 APPLICATIONS z Power Amplifier Applications TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance Fr.

  2SB688   2SB688







Part Number 2SB688
Manufacturers UTC
Logo UTC
Description SILICON PNP TRANSISTORS
Datasheet 2SB688 Datasheet2SB688 Datasheet (PDF)

UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBO.

  2SB688   2SB688







PNP EPITAXIAL SILICON TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3P ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L RATINGS -120 -120 -5 -10 -1 80 150 -40 ~ +150 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT Cob TEST CONDITIONS VCB = -120V, IE = 0 VEB = -5V, IC = 0.


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