2SB644

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.5 s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2SB643 2SB644 2SB643 2SB644 (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 90 – 0.35 200 6 *2 min typ max –100 –1 4.1±0.2 s Absolute Maximum Ratings (Ta=25˚C) R 0. 4.5±0.1 7 M type package allowing easy automatic and manual insertion ...