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2SB631K Datasheet

Part Number 2SB631K
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB631K Datasheet2SB631K Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB631 VCBO Collector-bas.

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Part Number 2SB631K
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB631K Datasheet2SB631K Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO E.

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Part Number 2SB631K
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistor
Datasheet 2SB631K Datasheet2SB631K Datasheet (PDF)

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to.

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Part Number 2SB631K
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon PNP transistor
Datasheet 2SB631K Datasheet2SB631K Datasheet (PDF)

2SB631K Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features ,,; 2SD600K 。 High VCEO, high current, low saturation voltage and good linearity of hFE;complementary pair with 2SD600K. / Applications 。 Low frequency power amplifier, medium speed switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range.

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Part Number 2SB631K
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet 2SB631K Datasheet2SB631K Datasheet (PDF)

Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO.

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SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB631 VCBO Collector-base voltage 2SB631K 2SB631 VCEO Collector-emitter voltage 2SB631K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 8 150 -55~150 Open collector Open base -120 -5 -1 -2 1 W V A A Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SB631 IC=-1mA; RBE=@ 2SB631K 2SB631 IC=-10µA ;IE=0 2SB631K IE=-10µA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS SYMBOL 2SB631 2SB631K MIN -100 TYP. MAX UNIT V(BR)CEO V -120 -100 V -120 -5 -0.4 -1.2 -1 -1 60 20 110 30 MHz pF 320 V V V µA µA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT CO.


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