Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2S...
Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD592 and 2SD592A
5.0±0.2
Unit: mm
4.0±0.2
q q
Low collector to emitter saturation
voltage VCE(sat). High transition frequency fT. (Ta=25˚C)
Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
13.5±0.5
5.1±0.2
s Features
0.45 –0.1
+0.2
0.45 –0.1
1.27
+0.2
emitter
voltage 2SB621A Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A mW ˚C ˚C
1.27
1 2 3
2.3±0.2
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage 2SB621 2SB621A 2SB621 2SB621A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob
*
Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA VCE = –5V, IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
min
typ
max – 0.1
Unit µA V
–30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20 30 –0.4 –1.2 340
V V
Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Trans...