2SB621A

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB621 2SB621A 2SB621 2SB621A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA VCE = –5V, IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max – 0.1 Unit µA V –30 –60 –25 –50 –5 85 50 – 0.2 – 0.85 200 20 30 –0.4 –1.2 340 V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Trans...