DatasheetsPDF.com

2SB596

Toshiba

SILICON PNP TRANSISTOR

SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • Good Linearity of hp E . • Comp...



2SB596

Toshiba


Octopart Stock #: O-1293505

Findchips Stock #: 1293505-F

Web ViewView 2SB596 Datasheet

File DownloadDownload 2SB596 PDF File







Description
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES Good Linearity of hp E . Complementary to 2SD526. Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage vCEO Emitter-Base Voltage Collector Current Emitter Current VEB0 XC IE Base Current IB Collector Power Dissipation (Tc=25°C) pc Junction Temperature T J Storage Temperature Range T stg RATING -80 -80 -5 -4 4 -3 30 150 -55^150 UNIT V V V A A A W °c °c 2.54 *H i-j *" = B 1 ,2.54 in * i 1 i 1 1. BASE 2. COLL£CTOR(HEAT SINK; 3. EMITTER JEDEC EIAJ TOSHI BA TO-220AB 2-10A1A Mounting Kit No. AC75 Weight : 1.9g ELECTRICAL CHARACTERISTICS (Ta=25 °C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current I CB0 V CB =-80V, I E=0 - - -30 Emitter Cut-off Current I EB0 VEB=-5V, I C =0 - - -100 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)