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2SB566K Datasheet

Part Number 2SB566K
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Triple Diffused Type Transistor
Datasheet 2SB566K Datasheet2SB566K Datasheet (PDF)

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbo.

  2SB566K   2SB566K






Part Number 2SB566AK
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB566K Datasheet2SB566AK Datasheet (PDF)

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbo.

  2SB566K   2SB566K







Part Number 2SB566A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB566K Datasheet2SB566A Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION ·With TO-220C package ·Complement to type 2SD476/476A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SB566 VCEO Collector-emitter voltage 2.

  2SB566K   2SB566K







Part Number 2SB566A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Transistor
Datasheet 2SB566K Datasheet2SB566A Datasheet (PDF)

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbo.

  2SB566K   2SB566K







Part Number 2SB566
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB566K Datasheet2SB566 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Complement to Type 2SD476 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector.

  2SB566K   2SB566K







Silicon PNP Triple Diffused Type Transistor

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SB566(K) –70 –50 –5 –4 –8 40 150 –55 to +150 2SB566A(K) –70 –60 –5 –4 –8 40 150 –55 to +150 Unit V V V A A W °C °C 2SB566(K), 2SB566A(K) Electrical Characteristics (Ta = 25°C) 2SB566(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SB566A(K) Max — — — –1 200 — –1.0 –1.2 — — — — Min –70 –60 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.3 3.0 2.5 Max — — — –1 200 — –1.0 –1.2 — — — — V V MHz µs µs µs Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V, IC = –1 A VCE = –4 V, IC = –0.1 A I C = –2 A, IB = –0.2 A I C = –2 A, IB = –0.2 A VCE = –4 V, IC = –0.5 A VCC = –10.5 V I C = 10IB1 = –10IB2 = –0.5 A Min –70 –50 –5 — 60 35 — — — — — — Typ — — — — — — — — 15 0.3 3.0 2.5 DC current tarnsfer ratio hFE1* hFE2 Collector to emitter sat.


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