SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
DESCRIP...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
DESCRIPTION ·With TO-3 package ·Complement to type 2SD425/426 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2SB555 VCBO Collector-base
voltage 2SB556 2SB555 VCEO Collector-emitter
voltage 2SB556 VEBO IC IE PC Tj Tstg Emitter-base
voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -120 -5 -12 12 100 150 -65~150 V A A W Open emitter -120 -140 V CONDITIONS VALUE -140 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2SB555 2SB556
SYMBOL
MIN
TYP.
MAX
UNIT
2SB555 V(BR)CEO Collector-emitter breakdown
voltage 2SB556 IC=-0.1A ;IB=0
-140 V -120
V(BR)EBO
Emitter-base breakdown
voltage
IE=-10mA ;IC=0 IC=-7A; IB=-0.7A
-5
V
2SB555 VCEsat Collector-emitter saturation
voltage 2SB556
-3.0 IC=-6A; IB=-0.6A IC=-7A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IE=0 ; VCB=-10V; f=1.0MHz IC=-2A ; VCE=-5V 40 -2.5
V
VBE ICBO IEBO hFE COB fT
Base-emitter on
voltage
V
Collector cut-off current
...