2SB1693

Transistors 2SB1693 Silicon PNP epitaxial planar type For general amplification ■ Features Large collector current IC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −40 −20 −15 − 0.5 −1 200 150 −55 to +150 Unit V V V A A mW °C °C 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 3D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage * Symbol VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = −100 mA VCE = −2 V, IC = −500 mA IC = −100 mA, IB = −10 mA IC = − 0.5 A, IB = −25 mA Transition frequency Collector output capacitance (Common base, input open circuited) VCB = −5 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −40 −2...