Power Transistors
2SB1623
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
...
Power Transistors
2SB1623
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown
voltage of the package: > 5 kV
13.7±0.2 4.2±0.2 Solder Dip
15.0±0.5
I Features
φ 3.2±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −8 −4 40 2.0 150 −55 to +150 °C °C Unit V V V A A W
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
2.54±0.30 5.08±0.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Base to emitter
voltage (DC value) Collector to emitter saturation
voltage VBE VCE(sat)1 VCE(sat)2 Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q R 1 000 to 2 500 fT ton tstg tf
*
Conditions VCB = −60 V, VBE = 0 VCB = −30 V, IB = 0 VEB = −5 V, IC = 0 IC = −30 mA, IB = 0 VCE = −3 V, IC = − 0.5 A VCE = −3 V, IC = −3 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA VCB = −10 V, IC = − 0.5 A...