Power Transistors
2SB1607
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD2469
Unit: mm
4.6±0...
Power Transistors
2SB1607
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD2469
Unit: mm
4.6±0.2
s Features
q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation
voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –130 –80 –7 –15 –7 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
15.0±0.3
3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.7–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
7°
1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = –3A, IB1 = – 0.3A, IB2 = 0.3A Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –5A, IB = – 0.25A...