Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features...
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q q q
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation
voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit
Parameter Collector to base
voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.1±0.2 8.0±0.2 Solder Dip
s Absolute Maximum Ratings
15.0±0.3
3.0±0.2
13.7–0.2
+0.5
V
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
emitter
voltage 2SB1605A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
7°
1 2 3
1:Base 2:Collector 3:Emitter TO–220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SB1605 2SB1605A 2SB1605 2SB1605A 2SB1605 2SB1605A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3...