Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplificatio...
Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
7.3± 0.1 1.8± 0.1
6.5± 0.1 5.3± 0.1 4.35± 0.1
2.3± 0.1 0.5± 0.1
2.5± 0.1
0.8max
q q q q
Possible to solder radiation fin directly to printed cicuit boad Type with universal characteristics Collector breakdown
voltage: VCBO/VCEO = –50V Collector current: IC = –2A
0.93±0.1
1.0± 0.1 0.1± 0.05 0.5± 0.1
0.75± 0.1 2.3± 0.1 4.6± 0.1
1
2
3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter U Type Package Unit: mm
(TC=25˚C)
Ratings –50 –50 –5 –3 –2 10 150 –55 to +150 Unit V V V A A W ˚C ˚C
1
6.5±0.2 5.35 4.35
1.8
0.75 2.3 2.3
0.6 0.5±0.1
2.3±0.1
2
3
1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency Collector output capacitance
(TC=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –10V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –200mA VCE = –2V, IC ...