2SB1556

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1556 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1556 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA -2.5 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V -3.0 V ICBO Collector Cutoff Current VCB= -140V ; IE=0 -5 μA hFE-1 DC Current Gain IC= -7A ; VCE= -5V 5000 30000 hFE-2 DC Current Gain IC= -12A ; VCE= -5V 2000 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 170 pF fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 30 MHz  hFE-1 Classifications A...