2SB1554

Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25˚C) 90° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip Ratings –60 –60 –20 –8 –4 –2 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCE = –50V, IB = 0 VEB = –15V, IC = 0 IC = –10mA, IB = 0 VCE = –4V, IC = – 0.8A VCE = –4V, IC = –2A IC = –2A, IB = –100mA IC = –2A, IB = –100mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –2A, IB1 = –100mA, IB2 = 100mA, VCC = –50V 25 0.4 0.6 0.25 –60 80 30 –1.0 –1.5 ...