TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1481
Switching Applications
2SB1481
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) Complementary to 2SD2241
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
...
