2SB1470

Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For power amplification Complementary to 2SD2222 ■ Features Optimum for 120 W HiFi output High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −160 −160 −5 −8 −15 150 3.5 150 −55 to +150 °C °C Unit V V V A A W B 1 2 10.9±0.5 20.0±0.5 (2.5) Solder Dip 3 1: Base 2: Collector 3: Emitter TOP-3L-A1 Package Internal Connection C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time * Conditions IC = −30 mA, IB = 0 VCB = −160 V, IE = 0 VCE = −160 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −7 A ...