2SB1451

Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low collector-to-emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2069B [2SB1451/2SD2200] ( ) : 2SB1451 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)90 (–)80 (–)6 (–)5 (–)9 1.65 30 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A Ratings min typ 70* 30 20 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V * : The 2SB14512SD2200 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO...