2SB1427

2SB1427 Middle Power Transistor (-20V, -2A) Parameter VCEO IC Value -20V -2A lFeatures 1)Low saturation voltage, 　VCE(sat):Max.-500mV at IC/IB=-1/-50mA. 2)Excellent DC current gain characteristics. lOutline 　 SOT-89 　 SC-62 MPT3 lInner circuit 　 　 　 　 　 Datasheet lApplication LOW FREQUENCY POWER AMPLIFIER lPackaging specifications Part No. Package 2SB1427 SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 BJ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20160107 - Rev.001 2SB1427 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values -20 -20 -6 -2 -3 0.5 2.0 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = -50μA Collector-emitter breakdown voltage BVCEO IC = -1mA Emitter-base breakdown voltage BVEBO IE = -50μA Collector cut-off current ICBO VCB = -16V Emitter cut-off current IEBO VEB = -5V Collector-emitter saturation voltage VCE(sat) IC = -1A, IB = -50mA DC current gain hFE VCE = -6V, IC = -500mA Transition freque...