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2SB1407S Datasheet

Part Number 2SB1407S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1407S Datasheet2SB1407S Datasheet (PDF)

2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VC.

  2SB1407S   2SB1407S






Part Number 2SB1407S
Manufacturers Kexin
Logo Kexin
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1407S Datasheet2SB1407S Datasheet (PDF)

SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 Transistors Features Low frequency power amplifier. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto.

  2SB1407S   2SB1407S







Silicon PNP Epitaxial Transistor

2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings –35 –35 –5 –2.5 –3 18 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –35 –35 –5 — 1 Typ — — — — — — — — Max — — — –20 320 — –1.5 –1.0 Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –35 V, IE = 0 VCE = –2 V, IC = –0.5 A*2 VCE = –2 V, IC = –1.5 A*2 VCE = –2 V, IC = –1.5 A*2 I C = –2 A, IB = –0.2 A*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1 as follows. B 60 to 120 C 100 to 200 D 160 to 320 2. Pulse test. 2 2SB1407(L)/(S) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 iC (peak) –3 IC (max) Area of Safe O.


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