2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
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2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1407(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Ratings –35 –35 –5 –2.5 –3 18 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Symbol V(BR)CBO Min –35 –35 –5 —
1
Typ — — — — — — — —
Max — — — –20 320 — –1.5 –1.0
Unit V V V µA
Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –35 V, IE = 0 VCE = –2 V, IC = –0.5 A*2 VCE = –2 V, IC = –1.5 A*2 VCE = –2 V, IC = –1.5 A*2 I C = –2 A, IB = –0.2 A*2
Collector to emitter breakdown V(BR)CEO
voltage Emitter to base breakdown
voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter
voltage Collector to emitter saturation
voltage VBE VCE(sat)
60 20 — —
V V
Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1 as follows. B 60 to 120 C 100 to 200 D 160 to 320
2. Pulse test.
2
2SB1407(L)/(S)
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 iC (peak) –3 IC (max) Area of Safe O...
