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2SB1406 Datasheet

Part Number 2SB1406
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Darlington Transistor
Datasheet 2SB1406 Datasheet2SB1406 Datasheet (PDF)

Ordering number:EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers. Features · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pul.

  2SB1406   2SB1406






Part Number 2SB1409S
Manufacturers Kexin
Logo Kexin
Description Silicon NPN Triple Diffused Type Transistor
Datasheet 2SB1406 Datasheet2SB1409S Datasheet (PDF)

SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SB1409S TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current .

  2SB1406   2SB1406







Part Number 2SB1409S
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1406 Datasheet2SB1409S Datasheet (PDF)

2SB1409(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VC.

  2SB1406   2SB1406







Part Number 2SB1409L
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1406 Datasheet2SB1409L Datasheet (PDF)

2SB1409(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VC.

  2SB1406   2SB1406







Part Number 2SB1409
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1406 Datasheet2SB1409 Datasheet (PDF)

2SB1409(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VC.

  2SB1406   2SB1406







Part Number 2SB1407S
Manufacturers Kexin
Logo Kexin
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1406 Datasheet2SB1407S Datasheet (PDF)

SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 Transistors Features Low frequency power amplifier. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto.

  2SB1406   2SB1406







PNP Epitaxial Planar Silicon Darlington Transistor

Ordering number:EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers. Features · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=–40V, IE=0 VEB=–6V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–10mA VCE=–10V, IC=–50mA IC=–500mA, IB=–0.5mA IC=–500mA, IB=–0.5mA E : Emitter C : Collector B : Base SANYO : NMP Ratings –80 –50 –10 –1.5 –3 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 4000 3000 120 –0.9 –1.5 max –100 –100 –1.5 –2.0 Unit nA nA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonab.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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