isc
Silicon PNP Darlington
Power Transistor
2SB1404
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Minimum Lot-to-Lot variations for robust device performance...