2SB1402

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1402 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -3 -6 2 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA; RBE== IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-1.5A ;IB=-3mA IC=-3A ;IB=-30mA IC=-1.5A ;IB=-3mA IC=-3A ;IB=-30mA VCB=-100V; IE=0 VCE=-100V; RBE== IC=-1.5A ; VCE=-3V ID=3A 1000 MIN -120 -120 -7 2SB1402 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ...