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2SB1400 Datasheet

Part Number 2SB1400
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Datasheet 2SB1400 Datasheet2SB1400 Datasheet (PDF)

2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 1 kΩ (Typ) 400 Ω (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –120 –1.

  2SB1400   2SB1400






Part Number 2SB1400
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1400 Datasheet2SB1400 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-B.

  2SB1400   2SB1400







Part Number 2SB1400
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1400 Datasheet2SB1400 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1400 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage.

  2SB1400   2SB1400







Silicon PNP Epitaxial Transistor

2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 1 kΩ (Typ) 400 Ω (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –120 –120 –7 –6 –10 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –3 A*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 I C = –3 A, IB = –6 mA*1 I C = –6 A, IB = –60 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 See switching characteristic curve of 2SB727(K). 2 2SB1400 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 –3 –1.0 –0.3 –0.1 Area of Safe Operation.


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