2SB1391

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –120 –120 –7 –8 –12 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –120 –120 –7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 See switching characteristic curve of 2SB791(K). 2 2SB1391 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) Area of Safe Operation –20 i C (peak) –10 Collector ...