2SB1389

isc Silicon PNP Darlington Power Transistor 2SB1389 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1389 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -2A; IB= -4mA -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -40mA -3.5 V ICBO ...