Elektronische Bauelemente
2SB1386
-5A, -30V PNP Silicon Low Frequency Transistor
RoHS Compliant Product A suffix of “-...
Elektronische Bauelemente
2SB1386
-5A, -30V PNP Silicon Low Frequency Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098
CLASSIFICATION OF hFE
Product-Rank 2SB1386-P
Range
82~180
Marking
BHP
2SB1386-Q 120~270 BHQ
2SB1386-R 180~390 BHR
SOT-89
123 A EC
4
B F
G H
J
D
K L
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
LeaderSize 7’ inch
REF.
A B C D E F
Millimeter Min. Max.
4.40 3.94
4.60 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2 0
REF.
G H J K L
Millimeter Min. Max. 0.40 0.58
1.50 TYP 3.00 TYP 0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current -Continuous
Symbol
VCBO VCEO VEBO
IC
Collector Power Dissipation
PD
Junction & Storage Temperature
TJ, TSTG
Note:
(1) Single pulse, Pw=10ms.
(2) When mounted on a 40⋅40⋅0.7 mm ceramic board.
Ratings
-30 -20 -6 -5 -10 0.5 2 150, -55~150
Unit
V V V A(DC) A(Pulse) (1)
W (2)
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation
voltage DC current gain * Transition frequency Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO VCE(sat) hFE fT COB
...
