isc
Silicon PNP Darlington
Power Transistor
DESCRIPTION ·High DC Current Gain-
:hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown
Voltage-
:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation
Voltage
:VCE(sat) = -1.5V(Max)@ IC= -1A ·Compleme...