SHINDENGEN
Darlington Transistor
2SB1284
(TP10J10)
- 1 0 A PNP
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
RATINGS
•...
SHINDENGEN
Darlington Transistor
2SB1284
(TP10J10)
- 1 0 A PNP
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
RATINGS
œAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage TemperatureTstg -55`+150 Ž Junction TemperatureTj +150 Ž Collector to Base
Voltage V -100 V CBO Collector to Emitter
Voltage V -100 V CEO Emitter to Base
Voltage V -7 V EBO Collector Current DCI -10 A C Collector Current Peak I -15 A CP Base Current DC I -0.8 A B Base Current Peak I -1.5 A BP Total Transistor Dissipation P Tc = 25Ž 35 W T Dielectric Strength Vdis Terminals to case AC21 minute kV Mounting Torque TOR (Recommended torque 0.5: 0.3N¥mj N¥m œElectrical Characteristics (Tc=25Ž) Item Symbol Conditions Ratings Unit Collector Cutoff Current V = -100V I Max -0.1 mA CBO CB I = -100V Max -0.1 CE CEO V Emitter Cutoff Current I V = -7V Max -5mA EBO EB DC Current Gain h = -3V, =I -5A Min 1,500 CE C FE V Max 15,000 Collector to Emitter V Saturation (sat)I = -5A
Voltage Max -1.5 V C CE Base to Emitter Saturation V (sat)I
Voltage = -10mA Max -2.0 V B Thermal Resistance BE ƒÆjc Junction to case Max 3.57 Ž/W Transition Frequency fT V = 10V, = -1A I TYP 20 MHz CE C Turn on Time ton Max 1 I = -5A C Storage Time =B2 I = -10mA ts I Max 4 ƒÊs B1 R = 6ƒ¶ L Fall Time tf V = -4V Max 2 BB2
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SB1284
hFE - I C
VCE = − 3V
10000 50°C
100°C
Tc = 150°C
DC Current Gain hFE
1000
100
25°C
0 °C
− 25°C
− 55°C
10 -0.01 -0.1
-1
-10
-15
Col...