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2SB1253

INCHANGE
Part Number 2SB1253
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 5, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 DESCRIPTION ·High DC Current Gain- : hFE= 5...
Datasheet PDF File 2SB1253 PDF File

2SB1253
2SB1253

Overview
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.
5V(Max.
)@IC= -5A ·Complement to Type 2SD1893 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=2...


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