isc Silicon PNP Power Transistor
2SB1217
DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Vol...
isc Silicon PNP Power Transistor
2SB1217
DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation
Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-60
V
-60
V
-7
V
-3
A
-5
A
-0.5
A
10 W
1.3
150
℃
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation
Voltage IC= -1.5A; IB= -0.15A
VBE(sat) Base-Emitter Saturation
Voltage
IC= -1.5A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.6A ; VCE= -2V
hFE-3
DC Current Gain
IC= -2.0A ; VCE= -2V
hFE-2 Classifications
M
L
K
100-200 160-320 200-400
2SB1217
MIN TYP. MAX UN...