2SB1209

Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 1.0 0.45±0.05 1 1.0±0.1 R 0. 7 0.85 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings –400 –400 –5 –200 –100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = –100µA, IE = 0 IC = –500µA, IB = 0 IE = –100µA, IC = 0 VCE = –5V, IC = –30mA IC = –10mA, IB = –1mA IC = –50mA, IB = –5mA VCB = –30V, IE = 20mA, f = 200MHz VCB = –30V, IE = 0, f = 1MHz 50 9 min –400 –400 –5 40 – 0.6 –1.5 V V MHz pF typ max Unit V V V 1.25±0.05 s Absolute Ma...