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2SB1182

Part Number	2SB1182
Manufacturer	Rohm
Description	Medium power Transistor
Features	1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial pl...
Published	Mar 22, 2005
Datasheet	2SB1182 PDF File

Features

1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor
Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..21 0.5±0.1 2SB1240 6.8±0.2...

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