Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For voltage switching Complementary to 2SD1746 ■ Features
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Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For
voltage switching Complementary to 2SD1746 ■ Features
Low collector-emitter saturation
voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
12.6±0.3 7.2±0.3 (1.0) (1.0)
Unit: mm
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
0˚ to 0.15˚
2.5±0.2
1.1±0.1
1.0±0.2
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4
0.9±0.1 0˚ to 0.15˚
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 15 1.3 150 −55 to +150 °C °C Unit V V V A A W
1
2
3
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter
voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation
voltage Base-emitter saturation
voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB ...