2SB1165

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.55V(Max)@IC= -3A ·High fT ·Good Linearity of hFE ·Fast switching time ·Complement to Type 2SD1722 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers,high-speed inverters and converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage -60 V -50 V -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 20 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1165 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=-0.1mA; IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V hFE-2 DC Current Gain IC= -4A ; VCE= -2V fT ...