2SB1151

SavantIC Semiconductor Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large current ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB1151 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current (DC) ICM Collector current-Peak IB Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE -60 -60 -7 -5 -8 -1 1.3 20 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A ICBO Collector cut-off current VCB=-50V; IE=0 IEBO Emitter cut-off current VEB=-7V; IC=0 hFE-1 DC current gain IC=-0.1A ; VCE=-1V hFE-2 DC current gain IC=-2A ; VCE=-1V hFE-3 DC current gain IC=-5A ; VCE=-2V Switching times ton Turn-on time tstg Storage time tf Fall time IC=-2A; IB1=-IB2=-0.2A RL=5.0@;VCCA10V hFE-2 Classifications ML K 100-200 160-320 200-400 Product Specification 2SB1151 MIN TY...