2SB1148A

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20 –10 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1148 2SB1148A 2SB1148 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SB1148A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.2±0.3 7.2±0.3 V A A W ˚C ˚C 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1148 2SB1148A 2SB1148 2SB1148A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = –...