2SB1142

Ordering number:2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042A [2SB1142/2SD1682] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (–)60 (–)50 (–)6 (–)2.5 (–)5.0 1.5 Unit V V V A A W W Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C Tj Tstg 10 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Gain-Bandwidth Product fT VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)2A VCE=(–)10V, IC=(–)50mA 100 100 R R 200 200 140 140 S S 280 280 200 200 T T Conditions Ratings min typ max (–)100 (–)100 (100)* 100* 35 140 400 400 280 U Unit nA nA (400)* 560 MHz * : The 2SB1142/2SD1682 are classified by 100mA hFE as follows : 2SB1142 2SD1682 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, suc...