2SB1126

Ordering number : EN1721B 2SB1126 / 2SD1626 SANYO Semiconductors DATA SHEET 2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications Relay drivers, hammer drivers, lamp drivers, motor drivers. Features High DC current gain (4000 or greater). Large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm) Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Marking 2SB1126 : BI 2SD1626 : DI Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0A VEB=(--)8V, IC=0A min Ratings (--)80 (--)50 (--)10 (--)1.5 (--)3 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Ratings typ max Unit (--)100 nA (--)100 nA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" ...